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Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFK32N100P
IXFX32N100P
V DSS
I D25
R DS(on)
t rr
= 1000V
= 32A
≤ 320m Ω
≤ 300ns
Fast Intrinsic Diode
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
1000
1000
V
V
TO-264 (IXFK)
V GSS
V GSM
I D25
I DM
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 30
± 40
32
75
V
V
A
A
G
D
S
(TAB)
I AR
E AS
dV/dt
P D
T J
T JM
T stg
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
16
1.5
10
960
-55 ... +150
150
-55 ... +150
A
J
V/ns
W
° C
° C
° C
PLUS247 (IXFX)
(TAB)
T L
T SOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
F C
Weight
Mounting torque
Mounting force
TO-264
TO-247
(IXFK)
(IXFX)
1.13/10
20..120/4.5..27
10
6
Nm/lb.in.
Nm/lb.
g
g
Features
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Advantages
Easy to mount
BV DSS
V GS = 0V, I D = 3mA
1000
V
Space savings
High power density
V GS(th)
V DS = V GS , I D = 1mA
3.5
6.5
V
I GSS
V GS = ± 30V, V DS = 0V
± 200
nA
Applications:
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
50 μ A
2.5 mA
320 m Ω
Switched-mode and resonant mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
? 2008 IXYS CORPORATION,All rights reserved
DS99777C(4/08)
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IXFK32N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK32N50Q 功能描述:MOSFET 32 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK32N50Q_04 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class
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IXFK32N80P 功能描述:MOSFET 32 Amps 800V 0.27 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFK32N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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